| PART |
Description |
Maker |
| MTP10N10EL MTP10N10ELG |
Power MOSFET 10 Amps, 100 Volts, Logic Level; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220
|
ON Semiconductor
|
| UF2810P UF281OP |
RF MOSFET Power Transistor, 10W, 28V 100-500MHz
|
Tyco Electronics
|
| UF2810P |
RF Power MOSFET Transistor 10W, 100-500 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| UF2840G |
RF Power MOSFET Transistor 40W, 100-500 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| UF2840P |
RF Power MOSFET Transistor 40W, 100-500 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| UF28100H |
RF Power MOSFET Transistor 100W, 100-500 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| UF28100M |
RF Power MOSFET Transistor 100W, 100-500 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| UF28100V |
RF Power MOSFET Transistor 100W, 100-500 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
STMicroelectronics N.V.
MICROSEMI CORP
|
|
